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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200605 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H2N7002SN N-Channel MOSFET (60V, 0.2A) H2N7002SN Pin Assignment & Symbol 3 2 3-Lead Plastic SOT-323 Package Code: SN Pin 1: Gate 2: Source 3: Drain 1 D Description N-channel enhancement-mode MOS transistor. G S Absolute Maximum Ratings Drain-Source Voltage ............................................................................................................................................ 60 V Drain-Gate Voltage (RGS=1M) ............................................................................................................................. 60 V Gate-Source Voltage ........................................................................................................................................... 20 V Continuous Drain Current (TA=25C)(1) ............................................................................................................. 200 mA Continuous Drain Current (TA=100C)(1) ........................................................................................................... 115 mA Pulsed Drain Current (TA=25C)(2) .................................................................................................................... 800 mA Total Power Dissipation (TC=25C).................................................................................................................. 200 mW Derate above 25C .................................................................................................................................. 0.16 mW / C Storage Temperature................................................................................................................................ -55 to 150 C Operating Junction Temperature .............................................................................................................. -55 to 150 C Lead Temperature, for 10 second Soldering ...................................................................................................... 260 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient................................................................................................... 625 C / W Electrical Characteristics (TA=25C) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Source Leakage Current, Forward Gate Source leakage Current, Reverse Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source On-State Voltage Symbol BVDSS VGS(th) IGSS/F IGSS/R IDSS ID(ON) VDS(ON) Test Conditions VGS=0, ID=10uA VDS=2.5V, ID=0.25mA VGS=+20V, VDS=0 VGS=-20V, VDS=0 VDS=60V, VGS=0 VDS>2VDS(ON), VGS=10V ID=50mA, VGS=5V ID=500mA, VGS=10V VGS=4.5V, ID=75mA Static Drain-Source On-State Resistance Forward Transconductance Turn-on Delay Time Turn-off Delay Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) GFS td(on) td(off) Ciss Coss Crss VDS=25V, VGS=0, f=1MHz VGS=5V, ID=50mA VGS=10V, ID=500mA VDS>2VDS(ON), ID=200mA (VDD=50V, RD=250, VGS=10V, RG=50) Min 60 1 500 80 Typ. 3.3 2.8 2.3 20 40 Max 2.5 100 -100 1 0.375 3.75 5.3 5 5 50 25 5 Unit V V nA nA uA mA V V mS nS nS pF pF pF (1)The Power Dissipation of the package may result in a continuous drain current. (2)Pulse Width300us, Duty cycle2%. H2N7002SN HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Output Characteristics 1 0.9 0.8 0.7 VGS=10V 9V 8V 7V 6V 0.8 0.7 0.6 VDS=10V Spec. No. : MOS200605 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 2/5 Transfer Characteristics TJ=-55C Tj=25C Tj=150C ID(A) 0.5 0.4 0.3 0.2 0.1 0 0 2 4 ID(A) 6 8 10 0.6 5V 4V 3V 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 VDS(V) VGS(V) Typical Transconductance 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 0.2 0.4 0.6 0.8 1 VDS=7V Tj=-55C Tj=25C Tj=150C On-resistance & Drain Current 3 2.5 VGS=4.5V RDS(on) () 2 gFS(S) 1.5 1 VGS=10V 0.5 0 ID(A) 0 0.1 0.2 0.3 0.4 0.5 0.6 ID (A) Capacitance 70 60 50 2.5 2 On-Resistance Variation With Temperature RDS(on) (m ) C(pF) 40 30 20 10 0 0 10 20 Coss Crss Ciss 1.5 1 0.5 0 VGS=10V ID=0.5A VDS(V) 30 40 50 -50 0 50 100 150 Tj Junction Temperature 1.2 1.1 Breakdown Voltage Variation With Temperature 0.8 0.7 Source-Drain Diode Forward Voltage BVDSS(V) 1 0.9 0.8 0.7 0.6 -50 VGS=0 ID=0.25mA Tj=150C Tj=25C 0.6 0.5 Is(mA) 0.4 0.3 0.2 0.1 0 Tj=-55C 0 50 100 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Tj Junction Temperature VSD(V) H2N7002SN HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200605 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 3/5 Safe Operating Area 10 1 0.9 0.8 Power Derating PD ,Power Dissipation (W) 1 0.7 0.6 0.5 0.4 0.3 0.2 0.1 100us Id (A) 0.1 1ms 10ms 100ms 0.01 DC 0.001 1 10 100 0 0 25 50 75 100 125 150 175 Vds (V) T,EMPERATURE Thermal Response 1 0.5 r(t) ,Transient Thermal Resistance (normalized) 0.2 0.1 0.1 0.05 0.02 0.01 single pluse 0.01 0.1 1 10 100 1000 t ,Time(ms) H2N7002SN HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-323(SC-70) Dimension 3 A Spec. No. : MOS200605 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 4/5 Marking: Q Lp detail Z W B A1 1 e1 e D E bp 2 C 702 Pb Free Mark Pb-Free: " " (Note) Normal: None A Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. Z Pin Style: 1.Gate 2.Source 3.Drain Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 He 0 1 scale 2 mm v A DIM A A1 bp C D E e e1 He Lp Q v w Min. 0.80 0.00 0.30 0.10 1.80 1.15 1.3 0.65 2.00 0.15 0.13 0.2 0.2 10 Max. 1.10 0.10 0.40 0.25 2.20 1.35 2.25 0.45 0.23 0 *: Typical, Unit: mm 3-Lead SOT-323 Plastic Surface Mounted Package HSMC Package Code: SN Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-2521-2056 Fax: 886-2-2563-2712 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-598-3621~5 Fax: 886-3-598-2931 H2N7002SN HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : MOS200605 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 5/5 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o o o Dipping time 10sec 1sec 10sec 1sec 260 C 5 C H2N7002SN HSMC Product Specification |
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